Topological Insulator: $\hbox{Bi}_{2}\hbox{Te}_{3}$ Saturable Absorber for the Passive Q-Switching Operation of an in-Band Pumped 1645-nm Er:YAG Ceramic Laser
By P. Tang, Xiaoqi Zhang, Chujun Zhao, Yong Wang, Han Zhang, D. Shen, Shuangchun Wen, Daiming Tang, D. Fan. IEEE Photonics Journal, 2013
139 citations recorded by the source corpus.
An in-band pumped 1.645-μm Er:YAG ceramic laser passively Q-switched by a topological insulator: Bi<sub>2</sub>Te<sub>3</sub> saturable absorber is reported. The average output power could reach up to 210 mW, corresponding to a pulsewidth, a pulse repetition rate, and a per-pulse energy of 6.3 μs, 40.7 kHz, and 5.3 μJ, respectively. This result indicates that the topological insulator: Bi<sub>2</sub>Te<sub>3</sub> could be a promising saturable absorber such as graphene, with potential applications for solid-state lasers.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9bfd00427bf52ce03a04093f5d3cfd596e7e9efc
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Citations in the corpus
- Self-Assembled Topological Insulator: Bi$_{2}$Se$_{3}$ Membrane as a Passive Q-Switcher in an Erbium-Doped Fiber Laser (2013, methodology): “The ability of TI-based SA devices for ultra-fast pulse lasers was demonstrated in [24]–[26], in which a TI on a quartz substrate was employed as a SA device.”