Quantized Anomalous Hall Effect in Magnetic Topological Insulators

By R. Yu, Wei Zhang, Haijun Zhang, Shoucheng Zhang, X. Dai, Z. Fang. Science, 2010

1,876 citations recorded by the source corpus.

Quantum Anomalous Hall Effect In addition to the Hall effect, which appears as a voltage change in conductors in response to an external magnetic field, ferromagnets exhibit the anomalous Hall effect, which is often proportional to their magnetization and independent of the presence of the magnetic field. This effect, first observed more than a century ago, has not been realized in its quantized form. Yu et al. (p. 61, published online 3 June) propose a realization of a quantum anomalous Hall system by magnetically doping thin films of three-dimensional topological insulators and calculate the effects of various dopants and film thicknesses. The resulting insulators are predicted to have long-range ferromagnetic order, potentially joining dilute magnetic semiconductors as candidates for spintronic applications. Magnetically doped topological insulators are predicted to be ferromagnetic and exhibit the quantum anomalous Hall effect. The anomalous Hall effect is a fundamental transport process in solids arising from the spin-orbit coupling. In a quantum anomalous Hall insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically nontrivial electronic structure, leading to the quantized Hall effect without an external magnetic field. Based on first-principles calculations, we predict that the tetradymite semiconductors Bi2Te3, Bi2Se3, and Sb2Te3 form magnetically ordered insulators when doped with transition metal elements (Cr or Fe), in contrast to conventional dilute magnetic semiconductors where free carriers are necessary to mediate the magnetic coupling. In two-dimensional thin films, this magnetic order gives rise to a topological electronic structure characterized by a finite Chern number, with the Hall conductance quantized in units of e2/h (where e is the charge of an electron and h is Planck’s constant).

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d7821c00788d420148b2174d714d3501534065df

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Ashvin Vishwanath
2. D. Vanderbilt
3. Hsin Lin
4. Arun Bansil
5. Shoucheng Zhang
6. Tanmoy Das
7. X. Dai
8. Z. Fang

In Condensed Matter Physics

1. Shoucheng Zhang
2. X. Dai
3. Z. Fang
4. H. Weng
5. Zhong Wang
6. Xiao-Liang Qi
7. Hsin Lin
8. Arun Bansil

In Materials Chemistry

1. Shoucheng Zhang
2. Ashvin Vishwanath
3. Hsin Lin
4. Arun Bansil
5. D. Vanderbilt
6. Allan H. MacDonald
7. Xiao-Liang Qi
8. Z. Fang

Citations in the corpus

• Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 and MnBi2nTe3n+1 (2019, background): “The quantum anomalous Hall effect has been first realized in magnetically doped (Bi,Sb)2Te3 thin films [9,10].”
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator (2013, background): “ Mn doping of the 2D TI realized in HgTe quantum wells (8); however, an external magnetic field might still be required to align the Mn moments in order to realize the QAH effect (18). As proposed in (9), due to the van Vleck mechanism doping the Bi2Te3 family TIs with isovalent 3d magnetic ions can”
• Topological insulators, topological superconductors and Weyl fermion semimetals: discoveries, perspectives and outlooks (2015, background): “This was one of the issues that prevented the protected surface states in 3D TIs from being used to realize many of the predicted novel phenomena in the context of applications [17, 110, 111, 114], especially the interface topological superconductivity via the proximity effect.”
• Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials (2018, background): “Exchange splitting introduced by the magnetic Mn layers, together with the strong SOC effects in the Bi-Te bands, cooperatively induces theQAHeffect, similarly as in themagnetically dopedBi2Te3-class TIs (4).”
• Z2Pack: Numerical Implementation of Hybrid Wannier Centers for Identifying Topological Materials (2016, background): “[104] Rui Yu, Wei Zhang, Hai-Jun Zhang, ShouCheng Zhang, Xi Dai, and Zhong Fang, “Quantized anomalous Hall effect in magnetic topological insulators,” Science 329, 61–64 (2010), http://science.”