On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices
By L. Efthymiou, Giorgia Longobardi, G. Camuso, Terry Chien, Max Chen, F. Udrea. 2017
136 citations recorded by the source corpus.
In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN high electron mobility transistors (HEMTs). Design parameters considered are pGaN doping and gate metal work function. The analysis considers the effects of variations on these parameters using a TCAD model matched with experimental results. A better understanding of the underlying physics governing the operation of these devices is achieved with a view to enable better optimization of such gate designs.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/33fa2193ccdef62cc70b3b0473af53a154005514
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In Electrical and Electronic Engineering
Citations in the corpus
- Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (2018, methodology): “A Schottky contact at the p-GaN gate can be used to reduce the gate current by several orders of magnitude [6], [7].”
- A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “[152] investigated effects of the p-GaN doping and gate metal work function on the”