Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

By Wei Wu, Huaqiang Wu, Bin Gao, Ning Deng, Shimeng Yu, He Qian. IEEE Electron Device Letters, 2017

187 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/33e5956d8804b7d5d63e0f8fe8e361ae9c39ff9e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Cellular and Molecular Neuroscience

1. Shimeng Yu
2. Daniele Ielmini
3. H. Philip Wong

In Electrical and Electronic Engineering

1. Shimeng Yu
2. Daniele Ielmini
3. H. Philip Wong
4. Ximeng Guan

Citations in the corpus

• Neuro-Inspired Computing With Emerging Nonvolatile Memorys (2018, background): “To make the SET process gradual, one way is the oxide stack engineering (i.e. bilayer oxides) to make weak or multiple weak filaments as demonstrated in TaOx/HfO2 [73] and AlOx/HfO2 [74] devices.”