Structural and electronic properties of graphite layers grown on SiC(0001).

By T. Seyller, K. Emtsev, K. Gao, F. Speck, L. Ley, A. Tadich, L. Broekman, J. Riley, R. Leckey, O. Rader and 2 more. 2006

162 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/33e0f2d5ff63ffbf4085ced99a764c90434c54b7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. A. Bostwick
2. K. Emtsev
3. T. Seyller
4. J. McChesney
5. Eli Rotenberg
6. K. Horn
7. T. Ohta
8. Francesco Bonaccorso

In Electrical and Electronic Engineering

1. Francesco Bonaccorso
2. Andrea C. Ferrari
3. C. Backes
4. Xiaodong Zhuang
5. A. Ciesielski
6. Paolo Samorì
7. A. Castellanos-Gómez
8. Xinliang Feng

In Materials Chemistry

1. Kostas Kostarelos
2. T. Seyller
3. M. Prato
4. Francesco Bonaccorso
5. A. Bostwick
6. K. Emtsev
7. A. Bianco
8. J. McChesney

Citations in the corpus

• Production and processing of graphene and related materials (2020, background): “The doubly filled bonding and empty anti-bonding Si-H states are located below and above the valence band minimum and valence band maximum, respectively, leaving the surface electronically passivated [656-658].”
• Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. (2009, background): “Note that scanning tunnelling microscopy has provided evidence that graphene layers are continuous over step edge”
• Epitaxial Graphene Transistors on SiC Substrates (2008, background): “STM analysis that the graphene layers are largely continuous over the edges of the SiC on both faces [7], [17].”