Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide.

By K. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. Kellogg, L. Ley, J. McChesney, T. Ohta, S. Reshanov, Jonas Röhrl and 5 more. Nature Materials, 2009

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Mechanical properties of graphene and graphene-based nanocomposites (2017, background): “The problems that are related with the specific process include the electrical properties of produced graphene which can be similar to the ones of graphene oxide as a result of poor transport at contacts between the graphene sheets [44].”
Manipulating the electronic and chemical properties of graphene via molecular functionalization (2013, background): “Single- and few-layer single crystalline graphene can also be grown epitaxially on single crystal metal substrates via thermal decomposition of hydrocarbons, or on single crystalline or polycrystalline SiC via segregation of carbon atoms during high temperature annealing [10–18].”
Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, methodology): “also used Ar buffer gas around 1000 mbar to suppress the evaporation of Si atoms [26].”