Silicon nanowire field-effect transistor-based biosensors for biomedical diagnosis and cellular recording investigation

By Kuan I. Chen, B. Li, Yit‐Tsong Chen. 2011

624 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/321a3909732a962cb08c91904992b43be42bda42

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Filippo Giubileo
2. A. Di Bartolomeo

In Electrical and Electronic Engineering

1. Filippo Giubileo
2. A. Di Bartolomeo

Citations in the corpus

• Comparative Performance Analysis of the Dielectrically Modulated Full- Gate and Short-Gate Tunnel FET-Based Biosensors (2015, neutral): “2390774 threshold voltage, transconductance, and capacitance [3], [8].”
• The role of contact resistance in graphene field-effect devices (2017, background): “Actually, several attempts have been already reported to realize innovative FETs, to keep the requirements of modern electronics technology, using III–V compound semiconductors (such as GaAs, AlAs, InAs, InP) [33], silicon nanowires [34], carbon nanotubes [35], organic materials [36], graphene [20] ”