Substitutional and interstitial oxygen in wurtzite GaN

By A. F. Wright. 2002

156 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/30d9475ed4e97efb20b5b61a06ccc60688d64fe8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Yuhao Zhang
2. Tomás Palacios
3. Min-Chul Sun
4. Nadim Chowdhury
5. Jie Hu
6. Daniel Piedra

In Electrical and Electronic Engineering

1. Yuhao Zhang
2. Tomás Palacios
3. Min-Chul Sun
4. Nadim Chowdhury
5. Jie Hu
6. Daniel Piedra

In Electronic, Optical and Magnetic Materials

1. Tomás Palacios
2. Min-Chul Sun
3. Nadim Chowdhury
4. Jie Hu
5. Yuhao Zhang
6. Daniel Piedra

Citations in the corpus

• Materials and processing issues in vertical GaN power electronics (2017, background): “Oxygen as a shallow donor in Wurtzite GaN with a transition to a DX-like state under hydrostatic pressure has been studied by first-principle calculation and experiments [29,30].”