Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
By Rui Zhang, T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi. 2011
154 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/30573e1342e951dc863f242df1e5fecc458ca650
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- Rui Zhang
- Po-Chin Huang
- Ju-Chin Lin
- N. Taoka
- T. Iwasaki
- M. Takenaka
- S. Takagi
- Noriyuki Taoka
Citations in the corpus
- High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation (2013, methodology): “We have proposed a plasma postoxidation (PPO) method, where Ge surfaces beneath Al2O3 layers are oxidized by using electron cyclotron resonance (ECR) oxygen plasma exposure to thin atomic layer deposition (ALD) Al2O3/Ge structures [24].”
- High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation (2012, methodology): “We have proposed a plasma post oxidation method to form a thin GeOx IL by oxidizing a Ge surface beneath a thin atomic layer deposition (ALD) Al2O3 layer using electron cyclotron resonance (ECR) oxygen plasma exposure [13].”