High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

By Rui Zhang, T. Iwasaki, Noriyuki Taoka, Mitsuru Takenaka, Shinichi Takagi. IEEE Transactions on Electron Devices, 2012

151 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8bd82b349351c80364e149475f8c1724f2a7a8d9

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1. Rui Zhang
2. Po-Chin Huang
3. Ju-Chin Lin
4. N. Taoka
5. M. Takenaka
6. S. Takagi

Citations in the corpus

• High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation (2013, methodology): “nm for Al2O3/GeOx/Ge gate stacks because of the insufficient GeOx IL thickness [26].”