High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

By Rui Zhang, Po-Chin Huang, Ju-Chin Lin, N. Taoka, M. Takenaka, S. Takagi. IEEE Transactions on Electron Devices, 2013

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