Gate-bias stress in amorphous oxide semiconductors thin-film transistors

By M. E. Lopes, H. Gomes, M. C. Medeiros, Pedro Barquinha, Luís Pereira, Elvira Fortunato, Rodrigo Martins, I. Ferreira. 2009

222 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/2daa0891ff03633b752faa605972ce672c56d624

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Citations in the corpus

• Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors (2011, result): “Note that these values are in good agreement with those previously reported for glass substrates [18], which indicate good device stability for TFTs”
• Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors (2010, methodology): “[18] report that exposure of unencapsulated 40-nm RF-sputtered IGZO SBG TFTs with 100-nm”
• Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors (2011, result): “53), respectively, which were comparable to the data reported previously for a positive bias stress [15].”