Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load Converter

By D. Reusch, J. Strydom. IEEE transactions on power electronics, 2014

296 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2b0d1d62cbcbe940fce21b78f2137e6d91d0738d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Edward A. Jones Jr.
2. Fred Wang
3. Burak Ozpineci

In Electrical and Electronic Engineering

1. Edward A. Jones Jr.
2. Bernard H. Stark
3. Fred Wang
4. Burak Ozpineci
5. Daniel Costinett

Citations in the corpus

• Application-based review of GaN HFETs (2014, background): “The parasitic inductance and junction capacitances also lead to high-frequency ringing, which can generate radiative EMI and interfere with converter operation [32]-[34].”
• A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI (2018, methodology): “Such a low parasitic inductance is required to fully utilize the switching capability of the GaN devices [17].”