Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier

By Shinji Yuasa, D. Djayaprawira. 2007

534 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2a4a1e3143919599d2454790fc2d3d34f2c80d3a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Chshiev
2. Alexander Driskill-Smith
3. Vladimir Nikitin
4. Eugene Chen
5. Adrian Ong
6. Steven Watts
7. Alexey Khvalkovskiy
8. W. H. Butler

In Electronic, Optical and Magnetic Materials

1. M. Chshiev
2. Bernard Dieny

In Materials Chemistry

1. M. Chshiev
2. Bernard Dieny

Citations in the corpus

• Towards Oxide Electronics: a Roadmap (2019, unknown): “magnetoresistive random access memories (MRAMs) [501,502].”
• Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities (2011, unknown): “Details of the growth and fabrication process have been presented elsewhere [30].”
• Basic principles of STT-MRAM cell operation in memory arrays (2013, methodology): “To minimize the magnetostatic interaction between the FL and the RL, RL is often made as a SAF-coupled bilayer [8, 70]; alternatively, two oppositely magnetized RLs can be used as discussed in section 5.”
• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, methodology): “…in the crystallinity of the magnetic electrodes and of the tunnel barrier yields the spin-filtering mechanism through which the giant tunnel magnetoresistance of crystalline MgO-based MTJs is generated (Butler et al., 2001; Parkin et al., 2004; Yuasa et al., 2004; Yuasa and Djayaprawira, 2007).”