Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

By J. Hader, J. V. Moloney, S. W. Koch. OPTO, 2010

221 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/af2625ae3641bb6407c63a9f0b4e9ed264941f79