Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

By A. David, T. Fujii, Rajat Sharma, K. Mcgroddy, Shuji Nakamura, Steven P. DenBaars, E. Hu, C. Weisbuch, H. Benisty. 2006

199 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Surfaces, Coatings and Films

View Paper: https://www.semanticscholar.org/paper/25760aba78b7eeafbb51e008d10189d2b9ae5417

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In Condensed Matter Physics

1. A. David

Citations in the corpus

• Photonic crystal LEDs – designing light extraction (2009, background): “The extraction length of the fundamental guided mode in the case of GaN-onsapphire LEDs has been calculated to be 80–200 μm [11,12] and for GaN-based laser lift-off LEDs it has been estimated to be 5–10 μm [14].”
• III -nitride photonic-crystal light-emitting diodes with high extraction efficiency (2009, background): “The multimode nature of GaN layers makes this question non-trivia”