Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
By Jian Ping Zhang, Hong Wang, M. Gaevski, C. Chen, Q. Fareed, J. Yang, G. Simin, M. Khan. 2002
201 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/22115010704066558853580862184dda84dce7f4
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In Condensed Matter Physics
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures (2013, background): “Furthermore, it was reported that the AlN/AlGaN superlatices can be used to alleviate the tensile strain and avoid the crack problems in AlGaN thick films with a high amount of Al [25].”
- Ultraviolet light-emitting diodes based on group three nitrides (2008, methodology): “The use of AlN/AlGaN SLs to alleviate the cracking of thick AlGaN films over sapphire substrates has also been reporte”