Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

By Sanjay Kumar Banerjee, L. Register, E. Tutuc, D. Reddy, Allan H. MacDonald. IEEE Electron Device Letters, 2009

189 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1e4bbe01617e65574590fa5d4e3cdd03813718d9

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. Ian A. Young
2. Frank Schwierz
3. Dmitri E. Nikonov

In Electrical and Electronic Engineering

1. Ian A. Young
2. Frank Schwierz
3. Dmitri E. Nikonov

In Materials Chemistry

1. Ian A. Young
2. Frank Schwierz
3. Dmitri E. Nikonov

Citations in the corpus

• Graphene Transistors: Status, Prospects, and Problems (2013, background): “In 2009, the bilayer pseudospin field-effect transistor (BiSFET) has been proposed [141].”
• Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking (2013, background): “The device proposal [17] postulates the current–voltage ð I (cid:2) V Þ curve with a peak at voltage of 5 mV.”