Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses.

By Y. Shiota, T. Nozaki, F. Bonell, S. Murakami, T. Shinjo, Yoshishige Suzuki. Nature Materials, 2011

705 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/1de1486b9692493e9aa368b17f20cdc8ea7b4a4e

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In Atomic and Molecular Physics, and Optics

In Electronic, Optical and Magnetic Materials

Citations in the corpus

Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling (2015, background): “, switching) energy dissipation [1]–[4].”
Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits (2015, background): “The cases are: mf = exchange bias exerted by a multiferroic material effect (such as in bismuth-iron-oxide) [33], me = exchange bias in a linear magnetoelectric effect (such as in chromia, Cr2O3) [34], ms = piezoelectric material (such as lead magnesium niobate-lead titanate) exerts strain on a ferr”
Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, background): “, 2009) or gate voltage (Bauer et al., 2015; Maruyama et al., 2009; Shiota et al., 2012; Wang et al., 2012a; Weisheit et al., 2007), which is connected to the dependence of the inter-”
Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, methodology): “When ultra-fast (<1 ns) voltage pulses are applied, the voltage-induced magnetization dynamics can be used to generate toggle switching of the MTJ by proper timing of the pulse [45, 48, 49], in an analogous fashion to the C-STT switching discussed previously.”
Electrical Detection of Magnetization Dynamics via Spin Rectification Effects (2016, neutral): “al [262] experimentally realized the direct resistance”
Interface-Induced Phenomena in Magnetism (2016, neutral): “External electrical manipulation of interface-induced perpendicular anisotropy in systems such as Co/Pt is an example [Weisheit et al., 2007; Maruyana et al., 2009; Niranjan et al., 2010; Wang et al., 2011; Shiota et al., 2012].”
Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, methodology): “Major attention has been paid to VCMA at FM=MgO interfaces and in MTJ, both experimentally (Shiota et al., 2009, 2012; Endo et al., 2010; Nozaki et al., 2010; Seki et al., 2011; Wang et al., 2012) and theoretically (Nakamura et al., 2010; Niranjan et al., 2010; Shimabukuro et al., 2010; Tsujikawa…”