Synthesis of high-purity boron nitride single crystals under high pressure by using Ba-BN solvent

By Takashi Taniguchi, Kenji Watanabe. 2007

543 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/1d719cc3ccc5f8bb8619e6abaf444d1247c21b7e

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In Condensed Matter Physics

In Materials Chemistry

In Mechanics of Materials

Citations in the corpus

Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride (2009, background): “The weak tail from 250 to 400 nm is a result of impurities and defect state”
Quantum Hall effect and Landau-level crossing of Dirac fermions in trilayer graphene (2011, methodology): “To overcome this problem, we use hexagonal boron nitride (hBN) single crystal”
Production and processing of graphene and related materials (2020, background): “It has been identified as the zero-phonon emission line (ZPL), labelled here α, of impurities introduced in the lattice during synthesis, probably C (or possibly O) as revealed by a detailed SIMS analysis [1554].”
Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor (2020, unknown): “The existence of nitrogen vacancies in h-BN has been pointed out by many prior studies of cathodoluminescence and elemental analysis (22, 48-50), and consequently confirmed by the scanning tunneling”
STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride (2011, methodology): “The hBN growth method has been previously described[27].”
Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. (2011, methodology): “The hBN growth method has been previously described[27].”
Excitonic linewidth approaching the homogeneous limit in MoS2-based van der Waals heterostructures (2017, methodology): “MoS2 MLs encapsulated in hexagonal boron nitride (hBN) [28] reaches values down to 2 meV at T 1⁄4 4 K; see for”