Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride.

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Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation (2015, background): “As the perfect dielectric layer, h-BN has an atomically flat and dangling bond-free surface, which ensures no charge traps at the G/h-BN interface and results in an order of magnitude increase of graphene’s carrier mobility as compared to the typical SiO2/Si substrate [12, 13].”
Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices (2012, background): “Furthermore, a non-trivial case also arises when two fractal gap states overlap(2), such as occurs between the (1,22) and (2,23) states in our data as w/woR 1.”
Novel effects of strains in graphene and other two dimensional materials (2015, background): “Random out-of-plane corrugations have been observed in graphene on different substrates (where it is assumed that they follow the corrugations of the substrate) [368] as well as in suspended samples [241].”
Colloquium: Graphene spectroscopy (2014, background): “First attempts to identify extra Dirac points in the SLG and hBN structures were unsuccessful because these points were outside the experimental energy window (Xue et al., 2011).”