Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride

By Kenji Watanabe, Takashi Taniguchi, T. Niiyama, K. Miya, M. Taniguchi. 2009

440 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/5a0c3477fae0655e4fcd66f548bf7cd034bbcd5e

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Citations in the corpus

• Hexagonal boron nitride is an indirect bandgap semiconductor (2015, background): “The use of high-purity hBN crystals has then allowed the demonstration of lasing at 215 nm by accelerated electron excitation [9], and also the operation of field emitter display-type devices in the deep ultraviolet [12, 13].”