Lifetime characterization of capacitive RF MEMS switches
By Charles L. Goldsmith, J. Ehmke, A. Malczewski, B. Pillans, S. Eshelman, Z. Yao, J. Brank, M. Eberly. 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2001
273 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/188dd3a03cff0713a3af566496f19cc238a1dea9
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Citations in the corpus
- Analytical Model of the DC Actuation of Electrostatic MEMS Devices With Distributed Dielectric Charging and Nonplanar Electrodes (2007, background): “Besides lowering the actuation voltage in an attempt to minimize the stress on the dielectric layer and the resulting builtin charges, various complex actuation schemes, like shaped actuation pulses [3] and bipolar actuation voltages [8], have been proposed.”
- Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles (2003, background): “Fig. 1 compares UIUC’s switch lifetime versus switching voltage to those reported by Rockwell, HRL, and Raytheon and illustrates UIUC’s lifetime objective with a star [1], [5], [ 15 ].”
- Electromechanical considerations in developing low-voltage RF MEMS switches (2003, background): “[16] have shown that the lifetime of capacitive switches strongly depends on the applied actuation voltage.”