Dielectric-Modulated Impact-Ionization MOS Transistor as a Label-Free Biosensor

By N. Kannan, Mamidala Jagadesh Kumar. IEEE Electron Device Letters, 2013

137 citations recorded by the source corpus.

In this letter, we propose a dielectric-modulated impact-ionization MOS (DIMOS) transistor-based sensor for application in label-free detection of biomolecules. Numerous reports exist on the experimental demonstration of nanogap-embedded field effect transistor-based biosensors, but an impact-ionization MOS (I-MOS)-based biosensor has not been reported previously. The concept of a dielectric-modulated I-MOS-based biosensor is presented in this letter based on technology computer-aided design simulation study. The results show a high sensitivity to the presence of biomolecules even at small channel lengths. In addition, a low variability of the sensitivity to the charges on the biomolecule is observed. The high sensitivity, dominance of dielectric-modulation effects, and operation at even small channel lengths make the DIMOS biosensor a promising alternative for CMOS-based sensor applications.

Subfields: Bioengineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/17278eb0835f7362e2299542a28df0fa95cf184b

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In Electrical and Electronic Engineering

1. Partha Sarathi Gupta
2. Sanatan Chattopadhyay
3. S. Kanungo
4. Hafizur Rahaman

Citations in the corpus

• Comparative Performance Analysis of the Dielectrically Modulated Full- Gate and Short-Gate Tunnel FET-Based Biosensors (2015, background): “These values are chosen following [9]–[11], [22], and [23], maintaining a uniform difference between the consecutive values for the better understanding.”