High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling

By Shinji Yuasa, Akio Fukushima, T. Nagahama, K. Ando, Yoshishige Suzuki. 2004

259 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics

View Paper: https://www.semanticscholar.org/paper/16707ff8775f9143461fdd25107664c0982da18a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. William J. Gallagher
2. Stuart S. P. Parkin
3. C. Marrows

In Condensed Matter Physics

1. Stuart S. P. Parkin
2. C. Marrows

Citations in the corpus

• Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip (2006, methodology): “Eventually the use of MBE techniques resulted in values in the range of 67% to 88% [49, 50] and ultimately 188% [51].”
• Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, unknown): “Employing a double-barrier structure has also been shown effective in increasing ∆V [76].”