Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs

By Zheng Chen, Dushan Boroyevich, Rolando P. Burgos, Fred Wang. 2009 IEEE Energy Conversion Congress and Exposition, 2009

155 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/10b6eb1e1eb6294fb948d31157e41094af00b9fe

How researchers see this paper

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In Electrical and Electronic Engineering

1. Daniel Christen
2. Jürgen Biela
3. Shuo Wang
4. Boyi Zhang

Citations in the corpus

• Modeling and Analysis of SiC MOSFET Switching Oscillations (2016, background): “SiC MOSFETs, arguably the most popular WBG power devices today, have been extensively investigated for fast-switching power converters [4], [5].”
• Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge (2019, background): “For better understanding the MOSFET switching transients and the effect of the parasitics several experimental studies were conducted in the past [6].”
• A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications (2014, unknown): “these results are either incomplete or insufficient in analysis to explain the device behaviors [11]–[13].”