Electrical contacts to carbon nanotubes down to 1nm in diameter

By Woong Kim, Ali Javey, R. Tu, Jie Cao, Qian Wang, Hongjie Dai. 2005

252 citations recorded by the source corpus.

Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d<∼1.6nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ⩽∼1.0nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0fc4faa9854520e758c3d949987c89d90758e678

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects (2009, background): “Experimental evidence shows that the nature of contacts also depends on nanotube diameter [65].”
High-resolution electrohydrodynamic jet printing. (2007, unknown): “These mobilities are between 7 and 42 cm 2 V −1 s −1 with L in the range of 1–42 μm, and decrease with L owing to the contact resistanc”
High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. (2007, unknown): “These mobilities are as high as ∼1,100 cm V s for L > 25 µ m , decreasing with L , likely owing to effects of contact”
Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques (2006, methodology): “To examine the impact of the overall SWCNT bundle resistance for realistic interconnect geometries, we calculated the total resistance of dense SWCNT bundles for various bundle lengths and widths, dt = 1.0 nm, Rcnom = 20 kΩ, and Io = 20 µA [ 17 ].”