Single‐Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid‐Phase Epitaxy

By Hiromichi Ohta, K. Nomura, M. Orita, M. Hirano, Kazushige Ueda, Tohru S. Suzuki, Yuichi Ikuhara, Hideo Hosono. 2003

171 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/046dcba72860847f41d6dcc8d4e533a6eb69b32c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Hideo Hosono
2. T. Kamiya
3. K. Nomura
4. Jae Kyeong Jeong
5. Jang Yeon Kwon
6. John F. Conley
7. Elvira Fortunato
8. Pedro Barquinha

In Electronic, Optical and Magnetic Materials

1. T. Kamiya
2. Hideo Hosono
3. K. Nomura
4. G. Stewart

In Materials Chemistry

1. Hideo Hosono
2. T. Kamiya
3. K. Nomura
4. Jae Kyeong Jeong
5. Jang Yeon Kwon
6. John F. Conley
7. Elvira Fortunato
8. Pedro Barquinha

Citations in the corpus

• Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping* (2009, background): “(c-IGZO5) has a clear layered structure composed of an alternate stacking of In-O layers and (Zn,Ga)-O layers [ 47 ], which are similar to -InGaO ZnO in Fig. 6(b).”
• Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model (2009, unknown): “The c-IGZO1 and c-IGZO5 films were epitaxial films fabricated on (111) yttria-stabilized zirconia single-crystal substrates by a reactive solid-phase epitaxy (R-SPE) method (see [ 26 ], [27] for fabrication details) with thickenss’ 200 nm. Their carrier concentrations were varied by thermal annealin”