Long-wavelength monolithic mode-locked diode lasers
By K. A. Williams, M. G. Thompson, Ian H. White. 2004
177 citations recorded by the source corpus.
A detailed study of the design issues relevant to long-wavelength monolithic mode-locked lasers is presented. Following a detailed review of the field, we have devised a validated travelling wave model to explore the limits of mode-locking in monolithic laser diodes, not only in terms of pulse duration and repetition rate, but also in terms of stability. It is shown that fast absorber recovery is crucial for short pulse width, that the ratio of gain to absorption saturation is key in accessing ultrashort pulses and that low alpha factors give only modest benefit. Finally, optimized contact layouts are shown to greatly enhance pulse stability and the overall operational success. The design rules show high levels of consistency with published experimental data.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/0447108c932b0afc45bf998ae7f6cdc299e5cb28
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Citations in the corpus
- RF Linewidth in Monolithic Passively Mode-Locked Semiconductor Laser (2008, background): “Monolithic mode-locked semiconductor lasers are increasingly attractive to provide stable and reliable pulse trains with multigigahertz repetition rates [1].”
- InGaAs Quantum-Dot Mode-Locked Laser Diodes (2009, unknown): “a shortening of the pulse duration [37].”