RF Linewidth in Monolithic Passively Mode-Locked Semiconductor Laser

By F. Kéfélian, S. O'Donoghue, M. Todaro, John G. McInerney, G. Huyet. IEEE Photonics Technology Letters, 2008

157 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2cc74ef04853339994fc08305490e2491eb33413

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In Atomic and Molecular Physics, and Optics

1. M. G. Thompson
2. Ian H. White

In Electrical and Electronic Engineering

1. M. G. Thompson
2. Ian H. White

Citations in the corpus

• InGaAs Quantum-Dot Mode-Locked Laser Diodes (2009, background): “now been demonstrated with repetition rates ranging from 300 MHz to 240 GHz [6], [7], pulse durations ranging from tens of picoseconds to below 400 fs [8]–[10], with low noise [11], chirp-free pulse generation [8], [12]–[14], and peak powers beyond 2 W [8], [10].”