Reproducible unipolar resistance switching in stoichiometric ZrO2 films

By Xiang Wu, P. Zhou, Jing Li, L. Y. Chen, H. Lv, Yinyin Lin, T. Tang. 2007

170 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications (2010, background): “However, several issues still exist for the ZrO2based RRAM devices, including high operation voltage, low resistance ratio, and the necessity of a high-voltage electroforming process [1]–[4], which are still to be investigated in order to render the ZrO2-based RRAM performance competitive for practi”
Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “[16] Wu X, Zhou P, Li J, Chen LY, Lv HB, Lin YY, et al.”
Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ (2008, background): “Even within the class of ZrO2-based ReRAM, the possible switching mechanisms seem to be surprisingly diverse, including electron trapping and detrapping [9], [13], formation and rupture of conducting filament [10], and the motion of oxygen vacancy/ion [12].”
Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions (2009, background): “variety of binary TMOs explored for ReRAM applications, such as NiO [2], TiO2 [3], ZrO2 [4]–[7], and HfO2 [8], the ZrO2-based film is one of the most promising high-κ dielectric materials and is fully compatible with the present CMOS technology [4]–[7].”