Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

By James R. Williams, Leonardo DiCarlo, Charles M. Marcus. Science, 2007

862 citations recorded by the source corpus.

The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and \batchmode \documentclass[fleqn,10pt,legalpaper]{article} \usepackage{amssymb} \usepackage{amsfonts} \usepackage{amsmath} \pagestyle{empty} \begin{document} \({3}/{2}\) \end{document} times the quantum of conductance, e2/h, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.

Subfields: Atomic and Molecular Physics, and Optics, Computational Theory and Mathematics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0329537ba424ca6fbb228bf657a00e2d850eef9f

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Citations in the corpus

Prediction of very large values of magnetoresistance in a graphene nanoribbon device. (2008, neutral): “Local gate control of the electrostatic potential in graphene-based devices has also been achieved recentl”
Electronic transport in two-dimensional graphene (2010, background): “The experimental realization of p-n junctions came shortly after the theoretical predictions (Huard et al., 2007; Lemme et al., 2007; Özyilmaz et al., 2007; Williams et al., 2007).”
Manipulating the electronic and chemical properties of graphene via molecular functionalization (2013, background): “It is worth mentioning that transport properties of graphene under the modulation of periodic surface potentials produced by alternative p-type and n-type graphene patterns are of great interests for both basic research and practical applications [81–83].”
Current saturation in zero-bandgap, top-gated graphene field-effect transistors. (2008, result): “1 c, which tracks the location of the Dirac point, has the slope C top s C back a 46 , giving C top a 552 nF cm , more than twice that of previously demonstrated device”
Gate-induced insulating state in bilayer graphene devices. (2007, result): “These observations are consistent with the expected behaviour of electrical transport through graphene monolayer”
Anisotropic behaviours of massless Dirac fermions in graphene under periodic potentials (2008, methodology): “or by applying a local top-gate voltage to graphen”