Valence band effective-mass expressions in the sp 3 d 5 s * empirical tight-binding model applied to a Si and Ge parametrization

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Bandstructure Effects in Silicon Nanowire Electron Transport (2007, methodology): “This work identifies the main bandstructure parameters that influence the transport properties of nanowire devices by using a nearestneighbor tight binding (TB) model (sp3d5s∗) [5]–[8] for electronic structure calculation, coupled to a 2-D Poisson”
Electronic properties of silicon nanowires (2005, methodology): “, [35]) are optimized with a genetic algorithm.”
On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors (2004, methodology): “the effective-masses used in the calculation ( and ) are extracted from the bulk – relation evaluated by our TB approach with the parameters obtained from [9].”
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks (2007, neutral): “parameterization is described in [19] and [20].”