Xinran Wang
Materials Chemistry · Nature Communications · 2012–2021
A researcher in the Science corpus: 15 papers; trusts 6 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 601 citations into it; #9,236 of 11,513 by trust here, #2,462 by citations
- Atomic and Molecular Physics, and Optics — 140 citations into it
Whom Xinran Wang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Xinran Wang overall
Papers from Xinran Wang's perspective
Ordered by how strongly the researchers Xinran Wang trusts endorse each paper. Same corpus, a different order for every researcher.
- Probing excitonic dark states in single-layer tungsten disulphide (Nature)
- Optical generation of excitonic valley coherence in monolayer WSe2. (Nature Nanotechnology)
- Integrated circuits based on bilayer MoS₂ transistors. (Nano letters (Print))
- The Physics of Low-dimensional Semiconductors: An Introduction; J.H. Davies, Cambridge University Press, UK, ISBN 0-521-48491-X, $44.95
- Symmetry-dependent phonon renormalization in monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow… (Physical review B)
- Raman spectroscopy and imaging of graphene
- Observation of biexcitons in monolayer WSe2 (Nature Physics)
- Two-dimensional semiconductors: recent progress and future perspectives
- Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons (Scientific Reports)
- Photoluminescence properties and exciton dynamics in monolayer WSe2
Their papers
- Hopping transport through defect-induced localized states in molybdenum disulphide (2013) — 1,093 citations
- Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering (2014) — 619 citations
- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances (2012) — 569 citations
- Strong photoluminescence enhancement of MoS(2) through defect engineering and oxygen bonding. (2014) — 1,125 citations
- Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors (2017) — 351 citations
- Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation (2016) — 148 citations
- High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs (2017) — 632 citations
- Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire (2021) — 676 citations
- Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains (2020) — 229 citations
- Bandgap engineering of two-dimensional semiconductor materials (2020) — 1,081 citations
- Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices (2019) — 405 citations
- A Self‐Healable, Highly Stretchable, and Solution Processable Conductive Polymer Composite for Ultrasensitive Strain and Pressure Sensing (2018) — 447 citations
- Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics (2017) — 557 citations
- 2D Single‐Crystalline Molecular Semiconductors with Precise Layer Definition Achieved by Floating‐Coffee‐Ring‐Driven Assembly (2016) — 147 citations
- Field-effect transistors based on two-dimensional materials for logic applications (2013) — 316 citations