Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

By Zhihao Yu, Yiming Pan, Yuting Shen, Zilu Wang, Z. Ong, Tao Xu, Run Xin, Lijia Pan, Baigeng Wang, Litao Sun and 5 more. Nature Communications, 2014

619 citations recorded by the source corpus.

Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and traps, leading to much lower mobility than the intrinsic limit. Here we develop a facile low-temperature thiol chemistry route to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps. High mobility >80 cm2 V−1 s−1 is achieved in backgated monolayer molybdenum disulfide field-effect transistors at room temperature. Furthermore, we develop a theoretical model to quantitatively extract the key microscopic quantities that control the transistor performances, including the density of charged impurities, short-range defects and traps. Our combined experimental and theoretical study provides a clear path towards intrinsic charge transport in two-dimensional dichalcogenides for future high-performance device applications. Impurities in molybdenum disulfide are known to reduce charge mobility to below its intrinsic limit. Here, the authors demonstrate that impurities are associated with lattice defects and that a chemical route can repair sulfur vacancies and improve interface quality with a substrate, enhancing device performance.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d4a289ff8a3911974c7b62835138a3a09d8b7dbb

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Citations in the corpus

2D semiconducting materials for electronic and optoelectronic applications: potential and challenge (2020, methodology): “To eliminate the intrinsic defects of TMDCs and improve their optical and electrical properties, various chemical surface treatments have been utilized [89, 103].”
High Responsivity Phototransistors Based on Few‐Layer ReS2 for Weak Signal Detection (2015, background): “Here, we only considered shallow traps because the density of the deep traps does not affect the mobility and conductivity [7, 8].”
Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation (2016, methodology): “The vacancies can be partially repaired by chemical functionalization of sulphur containing groups in order to improve the mobility (  ) [11].”
Strain effects on thermoelectric properties of two-dimensional materials (2015, neutral): “high-dielectric layer [71].”
Hysteresis in the transfer characteristics of MoS2 transistors (2017, background): “The low mobility has been mainly ascribed to short range scattering caused by structural defects, such as S vacancies and grain boundaries, or other forms of disorder related to the substrate, such as Coulomb traps, remote polar phonons and surface corrugations [14, 15].”
Spectroscopic investigation of defects in two-dimensional materials (2016, background): “containing groups and the mobility can be improved shown in Figure 2C [80].”