Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

By S. Thiele, J. Schaefer, Frank Schwierz. 2010

220 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ffd30a0aeb6b5289f741edf9dbb9898969f7af57

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In Atomic and Molecular Physics, and Optics

1. Frank Schwierz

In Electrical and Electronic Engineering

1. Frank Schwierz

In Materials Chemistry

1. Frank Schwierz

Citations in the corpus

• Graphene Transistors: Status, Prospects, and Problems (2013, methodology): “Later, several groups have investigated this effect in more detail by either extending the Meric model [103], [104] or by modifying models originally developed for Si MOSFETs [105] or HEMTs [106].”