Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

By J. Palmour, Lin Cheng, V. Pala, E. Brunt, Daniel Lichtenwalner, Gangyao Wang, J. Richmond, M. O'loughlin, S. Ryu, S. T. Allen and 2 more. International Symposium on Power Semiconductor Devices and IC's, 2014

282 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fe0643f3405c22fe7ca0b7d1274a812d6e3e5a11

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In Electrical and Electronic Engineering

1. Leon M. Tolbert
2. Zheyu Zhang
3. Fei Fred Wang
4. Fei Wang
5. Zhong Du
6. Keith McKenzie
7. John N. Chiasson

Citations in the corpus

• Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET (2018, background): “features from users’ perspective, including normally off operation, low turn-off loss due to the lack of bipolar tail current, low conduction loss, and low gate charge [9].”
• Overview of Silicon Carbide Technology: Device, Converter, System, and Application (2016, background): “3 kV and above) are generally in developmental stages with limited commercial availability and small current rating per die [54].”
• Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules (2019, background): “The device S2 is always OFF with a gate voltage of –6 V (SiC MOSFETs) or –10 V (Si IGBTs).”