Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

By Lei Zhang, Xibo Yuan, Xiaojie Wu, Congcong Shi, Jiahang Zhang, Yonglei Zhang. IEEE transactions on power electronics, 2019

341 citations recorded by the source corpus.

The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) <sc>mosfet</sc>s have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-/low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC <sc>mosfet</sc> module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC <sc>mosfet</sc> module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-<sc>off</sc> (crosstalk effect) is more harmful to the SiC <sc>mosfet</sc> module than the induced positive gate voltage during turn-<sc>on</sc> when the gate off-voltage is –6 V; the maximum <italic>dv</italic>/<italic>dt</italic> and <italic>di</italic>/<italic>dt</italic> (electromagnetic interference) during switching transients of the SiC <sc>mosfet</sc> module are close to those of the Si IGBT module when the gate resistance is larger than 8 Ω but the switching loss of the SiC <sc>mosfet</sc> module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC <sc>mosfet</sc> module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC <sc>mosfet</sc> modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2% efficiency can be achieved at the switching frequency of 80 kHz and the power of 100 kW.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6b11b629ff81b34005dcfcc3f7fee23639108374

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In Electrical and Electronic Engineering

  1. Shuo Wang
  2. Boyi Zhang

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