Practical design and simulation of silicon-based quantum-dot qubits
By M. Friesen, P. Rugheimer, D. Savage, Max G. Lagally, D. Weide, R. Joynt, M. Eriksson. 2002
201 citations recorded by the source corpus.
Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum-dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage control electronics. This translation is a necessary link between error correction theory and device physics.
Subfields: Atomic and Molecular Physics, and Optics, Computational Theory and Mathematics
View Paper: https://www.semanticscholar.org/paper/fd998996b114613b6a95c2efa5857dbdcf476507
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
Citations in the corpus
- Silicon quantum electronics (2012, background): “Various proposals have been made for electron spin qubits based on donors in Si (De Sousa et al., 2004; Hill et al., 2005; Hollenberg et al., 2006; Vrijen et al., 2000) and Si quantum dots (Friesen et al., 2003).”
- Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot (2007, background): “Such quantum dots are promising candidates as qubits for quantum computatio”