Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

By N. Shaji, C. Simmons, M. Thalakulam, L. Klein, H. Qin, H. Luo, D. Savage, Max G. Lagally, A. Rimberg, R. Joynt and 4 more. 2007

144 citations recorded by the source corpus.

The observation of spin blockade and lifetime-enhanced transport effects in Si/SiGe double quantum dots represents a promising step in the development of silicon-based quantum devices.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/59966f442b0a96d13e850646c41632390481b111

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. A. Morello
2. Gerhard Klimeck
3. Andrew Dzurak
4. Thaddeus D. Ladd
5. Kohei M. Itoh

In Electrical and Electronic Engineering

1. A. Morello
2. Gerhard Klimeck
3. Andrew Dzurak
4. Thaddeus D. Ladd

Citations in the corpus

• Coherent singlet-triplet oscillations in a silicon-based double quantum dot (2012, background): “Whereas the lowest-energy singlet state is able to freely transfer into (0,2), other states, including the lowest-energy triplet, are blocked by the Pauli exclusion principl”
• Silicon quantum electronics (2012, background): “For example, it is sometimes possible to observe transport through a double dot in gate-space regions where current would normally be blockaded, a phenomenon that has been termed lifetime enhanced transport (LET), observed in a Si/SiGe quantum dot structure (Shaji et al., 2008).”