Phase-transition driven memristive system

By T. Driscoll, Hyun-Tak Kim, B. Chae, M. Di Ventra, D. Basov. 2009

350 citations recorded by the source corpus.

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/fd411d3d18c24ceba397df125633ea46cbd894e8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. C. Ko
2. Zheng Yang
3. Shriram Ramanathan

In Polymers and Plastics

1. C. Ko
2. Zheng Yang
3. Shriram Ramanathan

Citations in the corpus

• Practical Approach to Programmable Analog Circuits With Memristors (2009, neutral): “Memristive behavior is found in many different systems [1], [2], [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13] , [14], [15], [16], [17], [18], [19], [20].”
• Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches (2013, background): “We have observed a clear correlation between electrically-driven ON/OFF current ratio and thermally-induced resistance change during metal-insulator transition.”
• Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions (2011, background): “Figure 9a shows a schematic of a VO2 memristor device (33).”