Stable ZnO thin film transistors by fast open air atomic layer deposition

By D. Levy, D. Freeman, S. Nelson, P. Cowdery-Corvan, L. Irving. 2008

242 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/fcbfdb6e05c1cc7dd1005df119732fbab1bc1b5a

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In Electrical and Electronic Engineering

1. John F. Conley

In Materials Chemistry

1. John F. Conley

Citations in the corpus

• Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors (2010, background): “[74] showed that 30-nm ALD Al2O3 passivated ALD ZnO TFTs exhibited much less +VG stress-induced VT shift than the unpassivated devices.”