Doping against the native propensity of MoS2: degenerate hole doping by cation substitution.

By Joonki Suh, T. Park, D. Lin, D. Fu, Joonsuk Park, Hee Joon Jung, Yabin Chen, C. Ko, C. Jang, Yinghui Sun and 4 more. Nano letters (Print), 2014

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Hysteresis in the transfer characteristics of MoS2 transistors (2017, methodology): “A p-type behavior can be achieved in MoS2 FETs using high-workfunction metal contacts, such as MoOx with x < 3 [54], or by exploiting substitutional acceptors such as niobium [48] in Nb/Pd contacts [55].”
Solid Lubrication with MoS2: A Review (2019, neutral): “Energy-filtered electron transmission microscopy spectrum imaging showed well dispersed Nb, and EXAFS showed the same atomic environment for Nb and Mo [179].”
Recent Advances in Two-Dimensional Materials beyond Graphene. (2015, methodology): “By the degenerately hole-doping of partially masked MoS2, the junction was formed at an interface between the doped and undoped crystal regions.(138) The partialmasking of theMoS2 surfacewas conducted by transfer of a hBN layer to protect the MoS2 area underneath from doping.”
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “Moreover, the authors demonstrated gate-tunable current rectification in MoS2 p-n homojunctions by combining their p-type MoS2 films with undoped intrinsically n-type MoS2 films [406].”
A roadmap for electronic grade 2D materials (2019, background): “14 442–9 [7] Suh J et al 2014 Doping against the native propensity of MoS2: degenerate hole doping by cation substitution Nano Lett.”