InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth

By Hiroshi Ito, T. Furuta, S. Kodama, Tadao Ishibashi. 2000

267 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Instrumentation

View Paper: https://www.semanticscholar.org/paper/fbb9608b18bb06a64b06c53685ed76743b7657ac

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Tadao Nagatsuma
2. Tadao Ishibashi
3. Yoshifumi Muramoto
4. Hiroshi Ito
5. Ian F. Akyildiz
6. Josep Miquel Jornet

Citations in the corpus

• 120-GHz-band millimeter-wave photonic wireless link for 10-Gb/s data transmission (2006, background): “For example, the responsivity of a UTC-PD with a 3-dB bandwidth of 310 GHz is approximately 0.075 A/W [ 11 ].”
• High‐power RF photodiodes and their applications (2009, unknown): “It must be noted that the fall time of the UTC-PD can be further decreased by shrinking the absorption layer while keeping the collection layer relatively thick [30].”
• High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes (2004, background): “4 shows the pulse photoresponse of a back-illuminated InP–InGaAs UTC-PD with a fast-response design in which absorption layer thickness is 30 nm, collection layer thickness is 230 nm, and an absorption area (S) is 5 m [12].”
• Photonic generation of continuous THz wave using uni-traveling-carrier photodiode (2005, background): “To date, an f3 dB of 310 GHz [9] and an output power of more than 20 mW at 100 GHz [10]”