Variation of the Oxidation Rate of Silicon Carbide with Water‐Vapor Pressure
By E. Opila. 2004
346 citations recorded by the source corpus.
Subfields: Aerospace Engineering, Ceramics and Composites, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/fb58132411e6735b1640a1834d0843d895f607e3
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Aerospace Engineering
- Stephen Sehr
- B. Richards
- H. Wadley
- M. Begley
- Foucault de Franqueville
- Volker Presser
- K. Nickel
- K. Young
In Ceramics and Composites
- Stephen Sehr
- B. Richards
- H. Wadley
- M. Begley
- Foucault de Franqueville
- Volker Presser
- K. Nickel
- K. Young
In Electrical and Electronic Engineering
- B. Richards
- Stephen Sehr
- Volker Presser
- K. Nickel
- H. Wadley
- M. Begley
- K. Young
- Foucault de Francqueville
Citations in the corpus
- Response of ytterbium disilicate–silicon environmental barrier coatings to thermal cycling in water vapor (2016, methodology): “In the as-deposited and the annealed states, the TGO layer was very thin, and the ERR calculated for all interfaces in the system were below 13 J/m [2] using bulk elastic moduli, Fig.”
- Fracture mechanisms of ytterbium monosilicate environmental barrier coatings during cyclic thermal exposure (2016, background): “Cristobalite has previously been identified to be the dominant TGO phase grown in the Yb2SiO5/Al6Si2O13/Si system using this Raman technique [32] and has also been identified as a dominant reaction product upon exposure to oxygen or water vapor at comparable temperatures [19,57].”
- Silica on Silicon Carbide (2008, background): “500 Above 1200°C, all faces follow a parabolic law after a linear transition time.”