Effects of floating-gate interference on NAND flash memory cell operation

By Jaeduk Lee, S. Hur, Jungdal Choi. 2002

346 citations recorded by the source corpus.

Subfields: Computer Networks and Communications, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fa230b02b3d99ea4bb33026c27273241777e5092

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Neal R. Mielke
2. Hanmant Belgal
3. Todd A. Marquart
4. Ning Wu
5. J. Kessenich
6. Eric Schares
7. Falgun Trivedi
8. Evan Goodness

Citations in the corpus

• Bit error rate in NAND Flash memories (2008, background): “The even page is written before the odd page, which results in different RBER values (because of FG-to-FG coupling [27] and other effects).”