Electric field effect tuning of electron-phonon coupling in graphene.

By Jun Yan, Yuanbo Zhang, Philip Kim, A. Pinczuk. Physical Review Letters, 2006

938 citations recorded by the source corpus.

Gate-modulated low-temperature Raman spectra reveal that the electric field effect (EFE), pervasive in contemporary electronics, has marked impacts on long-wavelength optical phonons of graphene. The EFE in this two-dimensional honeycomb lattice of carbon atoms creates large density modulations of carriers with linear dispersion (known as Dirac fermions). Our EFE Raman spectra display the interactions of lattice vibrations with these unusual carriers. The changes of phonon frequency and linewidth demonstrate optically the particle-hole symmetry about the charge-neutral Dirac point. The linear dependence of the phonon frequency on the EFE-modulated Fermi energy is explained as the electron-phonon coupling of massless Dirac fermions.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f89a0aaf340b9df63ff65690bed4c7beb4f3b19f

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Manipulating the electronic and chemical properties of graphene via molecular functionalization (2013, background): “In addition, a static electrical field induced Fermi level tuning of graphene can also be monitored by Raman spectroscopy [76].”
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. (2007, methodology): “Raman spectroscopy is a powerful non-destructive technique for identifying the number of layers, structure, doping and disorder of graphen”
Optoelectronic devices based on two-dimensional transition metal dichalcogenides (2016, background): “The most appealing features of graphene for nanophotonic applications originate from its zero-bandgap nature [7], with linear dispersion near the Dirac point [8].”
Raman Spectroscopic Characterization of Graphene (2010, background): “density resulting from the substrate is reached in the supported portion, which implies a shift in the Fermi energy of ∼250 meV from the Dirac point (69).”