Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.
By A. Das, Simone Pisana, B. Chakraborty, S. Piscanec, S. Saha, Umesh V. Waghmare, K. Novoselov, H. R. Krishnamurthy, A.K. Geim, Andrea C. Ferrari and 1 more. Nature Nanotechnology, 2007
3,429 citations recorded by the source corpus.
The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on SiO(2) back gating. Electrochemical top gating is widely used for polymer transistors, and has also been successfully applied to carbon nanotubes. Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported. Such high doping levels are possible because the nanometre-thick Debye layer in the solid polymer electrolyte gate provides a much higher gate capacitance than the commonly used SiO(2) back gate, which is usually about 300 nm thick. In situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, but the 2D peak shows a different response to holes and electrons. The ratio of the intensities of the G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor the doping.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/55b8d7f025f782cd137870bdeafdcdb71c5b038b
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In Materials Chemistry
- K. Novoselov
- A. Di Bartolomeo
- Zhenhua Ni
- Andrea C. Ferrari
- T. Yu
- Zexiang Shen
- Mildred S. Dresselhaus
- A.K. Geim
Citations in the corpus
- Raman Spectroscopic Characterization of Graphene (2010, background): “The solid line is adiabatic DFT calculation (71).”
- Evaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy (2017, methodology): “The corresponding p-type doping ranges from 5 · 1012 cm−2 to > 1014 cm−2 [17].”
- Production and processing of graphene and related materials (2020, background): “doping [1518], hence caution needs to be taken when using Raman spectroscopy to derive these information.”
- Raman characterization of defects and dopants in graphene (2015, background): “Therefore, any property of graphene that relies on the carrier concentration, such as the optical conductivity [72] and the carrier mobility [17], can be widely tuned (see figures 21(b) and (c)).”