Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

By A. Suresh, J. Muth. 2008

593 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f834cbeba6e92e2fc8e4f60668834a1bd7a889a6

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In Electrical and Electronic Engineering

1. John F. Conley

In Materials Chemistry

1. John F. Conley

Citations in the corpus

• Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors (2010, background): “For shorter wavelength exposures approaching the bandgap, VON shifts negatively, ΔVHYS increases, ION/IOFF decreases, mobility (μ) decreases, and subthreshold swing (S) increases as λ decreases.”