Anomalous exchange interactions in III-V dilute magnetic semiconductors
By M. Schilfgaarde, O. Mryasov. 2001
298 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/f7f4d659d531726a76aa50e64f41ecac5c90fbf9
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In Atomic and Molecular Physics, and Optics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “In (Ga,Mn)As the LSDA theory predicts short-range magnetic coupling while the LDA+U or SIC-LSDA results suggest that the holes which mediate the Mn-Mn exchange interaction are more delocalized (van Schilfgaarde and Mryasov, 2001; Schulthess et al., 2005; Wierzbowska et al., 2004).”
- A ten-year perspective on dilute magnetic semiconductors and oxides. (2010, background): “For instance, the computed energy change associated with bringing two Ga-substitutional Mn atoms to the nearest-neighbour cation position is E d = −120 meV in GaAs and −300 meV in GaN, and reaches −140 and −350 meV in the cases of a cation-substitutional Cr nearest-neighbour pair in ZnTe and GaN,”